MachineU > China Products > Chemicals
4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon
4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon
4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon
4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon
4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon
4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon
Specifications
Brand Name :
ZMSH
Model Number :
SICOI Wafers
Certification :
rohs
Place of Origin :
CHINA
MOQ :
25
Price :
by case
Payment Terms :
T/T
Delivery Time :
2-4weeks
Packaging Details :
package in 100-grade cleaning room
Size :
4inch/6inch/8inch
Surface Roughness :
Ra<0.5nm
Fracture Toughness :
3.5 MPa·m¹/²
CTE (4H-SiC) :
4.2×10⁻⁶/K
Resistivity (SI) :
>1×10⁶ Ω·cm
Applications :
High-Power Electronics,RF Devices
Description

SICOI Wafers Overview

4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon

4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon

SICOI (Silicon Carbide on Insulator) wafers represent a high-performance semiconductor substrate material that combines the exceptional physical properties of silicon carbide (SiC) with the electrical isolation advantages of an insulating layer (such as SiO₂ or Si₃N₄). The SICOI structure typically consists of a SiC single-crystal layer, an insulating layer, and a supporting substrate (e.g., Si or SiC). This configuration finds extensive applications in high-power, high-frequency, and high-temperature electronic devices, as well as in RF (Radio Frequency) and MEMS sensor fields.

Compared to conventional SiC wafers, SICOI wafers significantly reduce parasitic capacitance and leakage current through the incorporation of an insulating layer, thereby enhancing device operating frequency and energy efficiency. This technology is particularly suited for applications requiring high voltage resistance, low loss, and superior thermal performance, such as electric vehicles, 5G communications, and aerospace electronics.

SICOI Wafers Key Features

Feature Category

Specific Parameters/Performance

Technical Advantages

Material Structure

SiC single-crystal layer (4H/6H-SiC) + insulating layer (SiO₂/Si₃N₄) + supporting substrate (Si/SiC)

Enables electrical isolation and reduces parasitic effects

Electrical Performance

High breakdown field strength (>3 MV/cm), low dielectric loss

Ideal for high-frequency and high-voltage devices

Thermal Performance

High thermal conductivity (4.9 W/cm·K), high-temperature resistance (>500°C)

Excellent heat dissipation capability, suitable for high-temperature environments

Mechanical Performance

High hardness (Mohs hardness 9.5), low thermal expansion coefficient

Resists mechanical stress and enhances device reliability

Surface Quality

Atomically flat surface (Ra <0.2 nm)

Optimizes epitaxial growth quality and minimizes defects

Insulation Performance

High insulation resistance (>10¹⁴ Ω·cm), low leakage current

Suitable for RF and power devices requiring high isolation

Size and Customization

Supports 4/6/8-inch wafers with customizable thickness (SiC layer: 1-100 μm, insulating layer: 0.1-10 μm)

Meets diverse application requirements

SICOI Wafers Primary Applications

Application Field

Specific Scenarios

Core Advantages

High-Power Electronics

EV inverters, fast-charging stations, industrial power modules

High voltage resistance and low loss improve energy efficiency

RF Devices

5G base station power amplifiers (PAs), millimeter-wave RF frontends

Low parasitic capacitance enables high-frequency operation with minimal loss

MEMS Sensors

High-temperature pressure sensors, inertial navigation devices

Withstands high temperatures and radiation, suitable for harsh environments

Aerospace

Aircraft power systems, satellite communication equipment

High reliability and extreme temperature resistance

Smart Grid

High-voltage direct current (HVDC) transmission, solid-state circuit breakers

High insulation properties reduce energy loss

Optoelectronics

UV LEDs, laser diode substrates

High lattice matching improves device performance

The preparation process of 4H-SiCOI

4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon

The fabrication process of 4H-SiCOI and the microresonators with highlighted features.

  • a Fabrication process of pristine 4H-SiCOI material platform.
  • b Photograph of a 4-inch wafer-scale 4H-SiCOI substrate fabricated using bonding and thinning method, the failure region is marked.
  • c Total thickness variation of the 4H-SiCOI substrate.
  • d Image of a 4H-SiCOI die.
  • e Flowchart of fabricating a SiC microdisk resonator.
  • f A scanning electron micrograph (SEM) of the fabricated microdisk resonator.
  • g Zoom-in SEM image of the sidewall of the resonator. Inset, the atomic force micrograph (AFM) scan of the top surface of the resonator (Scale bar = 1 μm).
  • h Side view SEM image of the fabricated resonator with parabolic-like shaped upper surface.

4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon

SICOI Wafers Q&A​

1. Q: What is SICOI wafer?
A: SICOI (Silicon Carbide on Insulator) wafer is an advanced semiconductor substrate combining SiC's high-performance properties with an insulating layer for enhanced electrical isolation in power and RF devices.

2. Q: What are the advantages of SICOI wafers?
A: SICOI wafers offer lower parasitic capacitance, higher breakdown voltage, and better thermal management compared to standard SiC wafers, ideal for 5G and EV applications.


Tag: #4inch 6inch 8inch, #Customized, #4H-SiCOI Wafers, #Composite SiC on Insulator Substrates, #SiC, #SiO2, #Si,#SICOI wafer 4H-SiC on insulato, #100 to 150 mm, #sic film ON silicon, #Consist of some microns of SiC on top of a few microns of SiO2, on top of Si.

Send your message to this supplier
Send Now

4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon

Ask Latest Price
Product Detail
Brand Name :
ZMSH
Model Number :
SICOI Wafers
Certification :
rohs
Place of Origin :
CHINA
MOQ :
25
Price :
by case
Contact Supplier
4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon
4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon
4inch 6inch 8inch SICOI wafer 4H-SiC on insulator 100 to 150 mm sic film ON silicon

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products SiC Substrate
MachineU China Products Chemicals
Contact Supplier
Submit Requirement