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4inch 6inch 8inch 4H-SiCOI Wafers Composite SiC On Insulator Substrates
4inch 6inch 8inch 4H-SiCOI Wafers Composite SiC On Insulator Substrates
4inch 6inch 8inch 4H-SiCOI Wafers Composite SiC On Insulator Substrates
4inch 6inch 8inch 4H-SiCOI Wafers Composite SiC On Insulator Substrates
4inch 6inch 8inch 4H-SiCOI Wafers Composite SiC On Insulator Substrates
4inch 6inch 8inch 4H-SiCOI Wafers Composite SiC On Insulator Substrates
Specifications
Brand Name :
ZMSH
Model Number :
SiCOI Wafers
Certification :
rohs
Place of Origin :
CHINA
Price :
by case
Payment Terms :
T/T
Delivery Time :
2-4weeks
Size :
4inch/6inch/8inch
Surface Roughness :
Ra<0.5nm
Fracture Toughness :
3.5 MPa·m¹/²
CTE (4H-SiC) :
4.2×10⁻⁶/K
Resistivity (SI) :
>1×10⁶ Ω·cm
Application :
Power electronics, radio frequency and 5G communication
Description

Abstract of SiCOI Wafers

4inch 6inch 8inch 4H-SiCOI Wafers Composite SiC on Insulator Substrates

SICOI (Silicon Carbide on Insulator) wafers represent an advanced composite substrate technology fabricated through either Smart Cut™ or Bonding & Thinning processes. ZMSH supply 4-6 inch 4H-SICOI wafers by integrating high-quality SiC thin films with insulating layers (SiO₂/AlN) on silicon or SiC substrates via hydrophilic bonding or plasma-activated bonding techniques. Smart Cut™ Process: Utilizes hydrogen ion implantation, low-temperature bonding, and precision exfoliation to achieve ultra-thin SiC layers (50nm-20μm) with thickness uniformity of ±20nm, ideal for high-frequency, low-loss devices. Grinding+CMP Process: Suitable for thicker film requirements (200nm to custom thicknesses) with ±100nm uniformity, offering cost efficiency for power electronics applications. ZMSH provide customizable conductive or semi-insulating SiC films, with options for ion implantation annealing optimization or direct thinning/polishing to meet diverse performance and cost requirements.

Key Features of SiCOI Wafers

Component Property Specification Measurement Standard
4H-SiC Film Crystal Structure Single-crystal 4H-SiC ASTM F2094
Defect Density <10³ cm⁻² (threading dislocations)
Surface Roughness (Ra) <0.5 nm AFM measurement
Semi-insulating Resistivity >10⁶ Ω·cm SEMI MF397
N-type Doping Range 10¹⁶-10¹⁹ cm⁻³
Thermal Conductivity >300 W/(m·K)
SiO₂ Layer Formation Method Thermal oxidation
Dielectric Constant (ε) 3.9 JESD22-A109
Breakdown Field Strength >10 MV/cm
Interface Trap Density <10¹¹ cm⁻²eV⁻¹
Si Substrate Thermal Expansion (CTE) ~3.5×10⁻⁶/°C
Wafer Bow (8-inch) <50 μm SEMI M1
Temperature Stability >300°C
Integrated Performance Wafer Size Support 4-8 inch formats

Primary applications of SiCOI Wafers

4inch 6inch 8inch 4H-SiCOI Wafers Composite SiC On Insulator Substrates

1. Power Electronics

EV Inverters: SiC MOSFETs on SICOI substrates operate at 1200V with 30% lower switching losses, compatible with 800V fast-charging systems.

Industrial Motor Drives: SICOI wafers with AlN insulating layers enhance heat dissipation by 50%, supporting >10kW module packaging.

2. RF & 5G Communications

mmWave Power Amplifiers: GaN HEMTs on semi-insulating SICOI achieve 8W/mm output at 28GHz with >65% efficiency.

Phased Array Antennas: Low dielectric loss (tanδ<0.001) minimizes signal attenuation for satellite communications.

3. Quantum Computing & Sensing

Spin Qubit Carriers: Ultrathin SiC films (<100nm) provide low-noise environments, extending coherence times beyond 1ms.

High-Temp MEMS Sensors: Stable operation at 300°C for aerospace engine monitoring.

4. Consumer Electronics

Fast-Charging ICs: SICOI-based GaN devices enable >200W charging with 40% smaller footprint.

ZMSH's Services

As a leading wide-bandgap semiconductor substrate provider, we offer end-to-end technical support from R&D to mass production:

· Custom Development: Optimize SiC film thickness (nanoscale to microns), doping (N/P-type), and insulating layers (SiO₂/AlN/Si₃N₄) per device requirements.

· Process Consultation: Recommend Smart Cut™ (high precision) or Grinding+CMP (cost-effective) solutions with comparative data.

· Wafer-Level Testing: Includes interface state analysis, thermal resistance mapping, and high-voltage reliability validation.

4inch 6inch 8inch 4H-SiCOI Wafers Composite SiC On Insulator Substrates4inch 6inch 8inch 4H-SiCOI Wafers Composite SiC On Insulator Substrates

Q&A​

1. Q: What is SICOI wafer?
A: SICOI (Silicon Carbide on Insulator) wafer is an advanced composite substrate integrating single-crystal 4H-SiC film with SiO₂ insulating layer on silicon/sapphire base, enabling high-power and RF devices with superior thermal/electrical performance.

2. Q: How does SICOI compare to SOI?
A: SICOI offers 5x higher thermal conductivity (>300W/m·K) and 3x greater breakdown voltage (>8MV/cm) than SOI, making it ideal for 800V+ power electronics and 5G mmWave applications.


Tag: #4inch 6inch 8inch, #Customized, #4H-SiCOI Wafers, #Composite SiC on Insulator Substrates, #SiC, #SiO2, #Si

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4inch 6inch 8inch 4H-SiCOI Wafers Composite SiC On Insulator Substrates

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Product Detail
Brand Name :
ZMSH
Model Number :
SiCOI Wafers
Certification :
rohs
Place of Origin :
CHINA
Price :
by case
Payment Terms :
T/T
Contact Supplier
4inch 6inch 8inch 4H-SiCOI Wafers Composite SiC On Insulator Substrates
4inch 6inch 8inch 4H-SiCOI Wafers Composite SiC On Insulator Substrates
4inch 6inch 8inch 4H-SiCOI Wafers Composite SiC On Insulator Substrates

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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