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​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​
​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​
​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​
​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​
​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​
​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​
Specifications
Brand Name :
ZMSH
Model Number :
​​Bonding-Specific SiC Vacuum Chuck
Certification :
rohs
Place of Origin :
CHINA
MOQ :
5
Price :
by case
Payment Terms :
T/T
Delivery Time :
2-4 weeks
Packaging Details :
package in 100-grade cleaning room
Material Purity :
SiC ≥ 99.999%
Coefficient of Thermal Expansion :
~4.5×10⁻⁶/℃
Elastic Modulus :
>400 GPa
Surface Flatness :
≤1 μm
Surface Roughness (Ra)​​ :
≤0.01 μm
Adsorption Groove Accuracy :
±5 μm
Description

​​Bonding-Specific SiC Vacuum Chuck​ Brief

​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​

​​​​A Bonding-Specific Silicon Carbide (SiC) Vacuum Chuck is a high-performance ceramic adsorption component manufactured using ​​reaction sintering or chemical vapor deposition (CVD) processes​​, specifically designed for ​​semiconductor chip bonding processes​​. Its core function is to ​​stably adsorb and secure wafers​​ during bonding via ​​vacuum negative pressure or electrostatic adsorption principles​​, ensuring ​​micrometer or even sub-micrometer-level precise alignment and interconnection​​ between chips and substrates or interposers under high-temperature and pressurized conditions. It employs ​​ultra-high-purity silicon carbide ceramic​​ as the base material, utilizing ​​precisely engineered porous structures or surface electrode designs​​ to provide uniform adsorption force during bonding, preventing wafer slippage or deformation.

Key Performance Parameters

​​Parameter Category​​ ​​Parameter Name​​ ​​Typical Value/Range​​
​​Material Characteristics​​ Material Purity SiC ≥ 99.999%
Coefficient of Thermal Expansion ~4.5×10⁻⁶/℃
Thermal Conductivity ~120 W/(m·K) (room temperature)
Elastic Modulus >400 GPa
Bulk Density ≥3.1 g/cm³
​​Functional Characteristics​​ Surface Flatness ≤1 μm
Surface Roughness (Ra) ≤0.01 μm
Adsorption Groove Accuracy ±5 μm
Operating Temperature Room temperature~400°C (electrostatic type)

​​Bonding-Specific SiC Vacuum Chuck Features

  1. ​​Precision Air Channel Machining​​
  2. ​​Mirror Polishing​​ (or ​​Mirror Finish​​)
  3. ​​Ultra-Low Coefficient of Thermal Expansion​​ (Ultra-Low CTE)
  4. ​​High Stiffness​​
  5. ​​High Compactness​​
  6. ​​Surface Flatness and Parallelness up to 1 Micrometer​​ (Surface Flatness & Parallelism ≤1 μm)

​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​

Bonding-Specific SiC Vacuum Chuck Applications

​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​

Bonding-specific SiC vacuum chucks are primarily used in the following high-end manufacturing scenarios:

  • ​​Semiconductor Advanced Packaging​​: Used in ​​chip-to-wafer (C2W) or wafer-to-wafer (W2W) bonding​​ (e.g., Cu-Cu thermocompression bonding, hybrid bonding), supporting high-precision stacking in 3D IC and SiP packaging.
  • ​​MEMS Sensor Packaging​​: Provides high-temperature (≤400°C) adsorption and insulation support in ​​vacuum bonding or anodic bonding​​ for microelectromechanical systems, avoiding damage to sensitive structures.
  • ​​Power Device Interconnection​​: Used in ​​silver sintering or transient liquid phase (TLP) bonding​​ for SiC or GaN power modules, withstanding high temperatures while maintaining thermo-mechanical stability.
  • ​​Photonic Integration and Display Driving​​: Supports ​​Micro-LED mass transfer​​ or glass-silicon interposer bonding, achieving micrometer-level pick-and-place accuracy (±1μm).

​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​

Recommendation for Customized SiC Ceramics Components

1. SiC Ceramic Vacuum Chuck ​​Flip-Chip Bonding Mirror Polishing High-Stiffness​​

​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​

2. Customized SiC Ceramic Guide Rail Zero-Wear Corrosion-Resistant High-Speed​​

​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​

Bonding-Specific SiC Vacuum Chuck FAQ

Q1: Why choose a silicon carbide (SiC) vacuum chuck for bonding processes?​​

​​A1:​​ SiC vacuum chucks are chosen for their ​​exceptional thermal stability, ultra-low thermal expansion, and high stiffness​​, which ensure ​​micron-level alignment accuracy​​ and ​​prevent wafer deformation​​ during high-temperature bonding.

​​Q2: What are the primary applications of SiC vacuum chucks in semiconductor manufacturing?​​

​​A2:​​ They are primarily used in ​​advanced semiconductor packaging​​ processes such as ​​chip-to-wafer (C2W) and wafer-to-wafer (W2W) bonding​​, ​​MEMS sensor encapsulation​​, and ​​power device interconnection​​ (e.g., SiC/GaN module sintering), where ​​high temperature, precision alignment, and contamination control​​ are critical.


Tags: #Bonding-Specific SiC Vacuum Chuck, #Customized, #Wafer Adsorption, #Surface Flatness ≤1μm​​

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​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​

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Product Detail
Brand Name :
ZMSH
Model Number :
​​Bonding-Specific SiC Vacuum Chuck
Certification :
rohs
Place of Origin :
CHINA
MOQ :
5
Price :
by case
Contact Supplier
​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​
​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​
​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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