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​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device
​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device
​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device
​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device
​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device
​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device
Specifications
Brand Name :
ZMSH
Model Number :
4H 6inch SiC Epitaxial Wafer
Certification :
rohs
Place of Origin :
CHINA
MOQ :
5
Price :
by case
Payment Terms :
T/T
Delivery Time :
2-4weeks
Packaging Details :
package in 100-grade cleaning room
Size :
6 inch
Thickness :
200-300 um
Material :
4H-SiC
Conductivity Type :
N-type (doped with Nitrogen)
Resistivity :
ANY
TTV :
≤ 10 µm
BOW/Warp :
≤ 20 µm
Packaging :
vacuum sealed
Description

SiC Epi Wafer Overview​

​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device

The 4H-SiC epitaxial wafer is a core material for carbon disulfide (SiC) power devices, fabricated on a 4H-SiC single-crystal substrate via chemical vapor deposition (CVD). Its unique crystal structure and electrical characteristics make it an ideal substrate for ultra-high voltage (UHV, >10 kV) metal-oxide-semiconductor field-effect transistors (MOSFETs), junction barrier Schottky diodes (JBS), and other power devices. This product offers three epitaxial layer thicknesses (​​100μm, 200μm, 300μm​​) to address applications ranging from low-voltage to UHV scenarios, suitable for new energy vehicles (NEVs), industrial power systems, and smart grid technologies.

SiC epitaxial wafer Characteristic

​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device

1. High Breakdown Voltage & Low On-Resistance​​

  • Achieves balanced breakdown voltage (BV) and specific on-resistance (R<sub>sp</sub>) via ​​deep doping pillar structures​​ (alternating n-type and p-type columns). For example, 5 kV-class SJ MOSFETs exhibit R<sub>sp</sub> as low as ​​9.5 mΩ·cm²​​ at room temperature, rising to ​​25 mΩ·cm²​​ at 200°C.
  • Adjustable epitaxial layer thickness and doping concentration (e.g., 100μm layer for 3.3 kV devices, 300μm layer supporting >15 kV applications).

2. Exceptional Thermal Stability & Reliability​​

  • Leverages ​​high thermal conductivity (4.9 W/cm·K)​​ and ​​wide bandgap (3.2 eV)​​ to operate stably above ​​200°C​​, minimizing thermal management complexity.
  • Employs ​​ultra-high energy ion implantation (UHEI)​​ (up to 20 MeV) to reduce lattice damage, combined with ​​1700°C annealing​​ to repair defects, achieving leakage current density < ​​0.1 mA/cm²​​.

​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device

3. Low Defect Density & High Uniformity​​

  • Optimized growth parameters (C/Si ratio, HCl doping strategy) yield surface roughness (RMS) of ​​0.4–0.8 nm​​ and macro-defect density < ​​1 cm⁻²​​.
  • Doping uniformity (CV testing) ensures standard deviation < ​​15%​​, guaranteeing batch consistency.

4. Compatibility with Advanced Fabrication Processes​​

  • Supports ​​trench filling​​ and ​​deep doping pillar architectures​​, enabling lateral depletion designs for UHV MOSFETs with breakdown voltages exceeding ​​20 kV​​.

​​4H-SiC Epitaxial Wafer Applications​​

​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device

1.Ultra-High Voltage Power Devices​​

  • New Energy Vehicles (NEVs)​​: Main drive inverters and onboard chargers (OBC) for 800V platforms, enhancing efficiency by ​​10–15%​​ and enabling fast charging.
  • ​​Industrial Power Systems​​: High-frequency switching (MHz range) in photovoltaic inverters and solid-state transformers (SSTs), reducing losses by >30%.

2.Smart Grids & Energy Storage​​

  • Grid-forming energy storage PCS for weak-grid stabilization.
  • High-voltage DC transmission (HVDC) and smart distribution equipment, achieving >99% energy conversion efficiency.

3.Rail Transit & Aerospace​​

  • Traction inverters and auxiliary power systems for extreme temperatures (-60°C to 200°C) and vibration resistance.

4.Research & High-Tech Manufacturing​​

  • Core material for ultra-heavy element (e.g., Nh) detectors, enabling high-temperature (300°C) α-particle detection with energy resolution < ​​3%​​.

​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device

4H-SiC Epitaxial Wafer parameters

Parameter Specification / Value
Size 6 inch
Material 4H-SiC
Conductivity Type N-type (doped with Nitrogen)
Resistivity ANY
Off-Axis Angle 4°±0.5° off (typically toward [11-20] direction)
Crystal Orientation (0001) Si-face
Thickness 200-300 um
Surface Finish Front CMP polished (epi-ready)
Surface Finish Back lapped or polished (fastest option)
TTV ≤ 10 µm
BOW/Warp ≤ 20 µm
Packaging vacuum sealed
QTY 5 pcs

More samples of SiC Wafers

​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device

*We accept customized one, please feel free to contact us about your requirements.

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​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device

SiC Epi Wafer FAQ

1. Q: What is the typical thickness range for 6-inch 4H-SiC epitaxial wafers?​​

A:​​ The typical thickness ranges from ​​100–500 μm​​ to support ultra-high-voltage (≥10 kV) MOSFET applications, balancing breakdown voltage and thermal management.

2. Q: What industries use 6-inch 4H-SiC epitaxial wafers?​​

A:​​ They are critical for ​​smart grids, EV inverters, industrial power systems, and aerospace​​, enabling high efficiency and reliability in extreme conditions.


Tags: #​​6inch, #Custom, #​​4H-SiC Epitaxial Wafer, #4H-N Type, #100μm/200μm/300μm​​, #Ultra-High Voltage (UHV), #MOS Device, #SiC Crystal, #Silicon Carbide Substrate, #100-500μm

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​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device

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Product Detail
Brand Name :
ZMSH
Model Number :
4H 6inch SiC Epitaxial Wafer
Certification :
rohs
Place of Origin :
CHINA
MOQ :
5
Price :
by case
Contact Supplier
​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device
​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device
​​4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
8 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Gallium Nitride Wafer, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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