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4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
Specifications
Brand Name :
ZMSH
Model Number :
4h-n
Certification :
CE
Place of Origin :
CHINA
MOQ :
3PCS
Price :
by size and grade
Payment Terms :
T/T,Western Union
Supply Ability :
1000pc/month
Delivery Time :
1-4weeks
Packaging Details :
single wafer container box or 25pc cassette box
Materials :
SIC crystal
type :
4h-n
purity :
99.9995%
resistivity :
0.015~0.028ohm.cm
size :
2-8inch 2inch, 3inch ,4inch ,6inch ,8inch
Application :
for SBD, MOS Device
TTV :
≤ 15um
bow :
≤ 25um
warp :
≤ 5um
Description
4H-N Type / Semi-Insulating SiC Substrates – High-Performance Silicon Carbide Wafers for Power Electronics
Product Overview

4H-N type and semi-insulating silicon carbide (SiC) substrates are high-purity single-crystal wafers manufactured using the Physical Vapor Transport (PVT) method. These substrates exhibit outstanding electrical and thermal properties, including wide bandgap characteristics, high breakdown electric field, and exceptional thermal conductivity. Ideal for epitaxial growth of SiC or III-Nitride materials, they serve as key foundational components in high-power, high-frequency, and high-temperature electronic devices.

Key Features
  • Excellent Electrical Properties:
    • 4H-N Type: Resistivity 0.015–0.028 Ω·cm
    • Semi-Insulating Type: Resistivity ≥10⁵ Ω·cm
  • Superior Geometric Quality:
    • Total Thickness Variation (TTV) ≤ 15 µm
    • Bow ≤ 40 µm, Warp ≤ 60 µm
  • Precise Orientation Control:
    • On-axis orientation: <±0.5°
    • Off-axis cut: 4°±0.5° toward [11-20] direction
  • Controlled Surface Finish:
    • Standard polished surface: Ra ≤ 1 nm
    • CMP polished surface: Ra ≤ 0.5 nm
Typical Applications
  • Power Electronics: Schottky barrier diodes (SBDs), MOSFETs, IGBTs
  • RF & Microwave Devices: High-frequency power amplifiers, MMICs
  • Optoelectronics: GaN-based LED and laser epitaxial substrates
  • High-Temperature Sensors: Automotive, aerospace, and energy sector applications

​4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates

Technical Specifications
Parameter Specification Notes
Wafer Diameter 2 inch (50.8 mm) / 4 inch (101.6 mm) Custom diameters available
Thickness 330–500 µm (±25 µm tolerance) Custom thickness on request
Orientation Accuracy On-axis <±0.5°; Off-axis 4°±0.5° Toward [11-20]
Micropipe Density Zero-grade: ≤1 cm⁻²; Production-grade: ≤5 cm⁻² Measured by optical microscopy
Surface Roughness Polished: Ra ≤ 1 nm; CMP: Ra ≤ 0.5 nm AFM verified
SiC Industry Chain Context

The silicon carbide industry encompasses substrate preparation, epitaxial growth, device fabrication, and end-use applications. Using the PVT method, high-quality monocrystalline SiC substrates are produced, serving as the base for epitaxial deposition (via CVD) and subsequent device manufacturing. ZMSH supplies 100 mm and 150 mm SiC wafers that meet stringent industrial requirements for high-power and high-frequency applications.
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates

Frequently Asked Questions (FAQ)

Q: What is the minimum order quantity (MOQ)?

A: Standard products: 3 pieces; Customized specifications: 10 pieces and above.

Q: Can I request customized electrical or geometric parameters?

A: Yes, we support customization of resistivity, thickness, orientation, and surface finish.

Q: What is the typical delivery time?

A: Standard items: 5 working days; Customized orders: 2–3 weeks; Special specifications: ~4 weeks.

Q: What documentation is provided with the order?

A: Each shipment includes a test report covering resistivity mapping, geometric parameters, and micropipe density.

Tags:
SiCSubstrate #4H-SiC #SiliconCarbideWafer #PowerElectronics #Semiconductor #HighFrequencyDevices #WideBandgap #ZMSH

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4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates

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Product Detail
Brand Name :
ZMSH
Model Number :
4h-n
Certification :
CE
Place of Origin :
CHINA
MOQ :
3PCS
Price :
by size and grade
Contact Supplier
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates
4H-N Type / Semi-Insulating Silicon Carbide SiC Substrates

SHANGHAI FAMOUS TRADE CO.,LTD

Verified Supplier
9 Years
shanghai, shanghai
Since 2013
Business Type :
Manufacturer, Agent, Importer, Exporter, Trading Company
Main Products :
Plastic Carrier Bags, Sapphire Wafer, SiC Substrate
Total Annual :
1000000-1500000
Certification Level :
Verified Supplier
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