Product Information

A Silicon Carbide (SiC) Tray is a high-performance precision ceramic carrier designed for semiconductor wafer processing, high-temperature thermal processing, CVD/PECVD systems, vacuum furnaces, and other demanding industrial environments.

Its main functions include:

• Supporting wafers and process components
• Positioning wafers during processing
• Wafer transfer and handling
• Supporting components during high-temperature processes
• Serving as a precision ceramic component in semiconductor equipment

Our publicly available SiC wafer tray product is designed for semiconductor wafer processing, CVD/PECVD systems, vacuum furnaces, and high-temperature industrial applications. Depending on the application, high-purity CVD SiC or SSiC can be used.























Manufacturing Process

The actual manufacturing process varies depending on the SiC material system and application requirements. A typical manufacturing route includes:

1. Raw Material Selection & Preparation
CVD SiC, SSiC, or another suitable SiC material is selected according to purity and application requirements.

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2. Forming / Preform Preparation

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3. Sintering / Densification

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4. Precision Machining
CNC machining and grinding are used to achieve the required dimensions, mounting holes, slots, and structural features.

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5. Grinding / Polishing
The functional surfaces can be precision ground, lapped, or polished according to application requirements.

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6. Cleaning & Inspection

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7. Protective Packaging & Shipment
Our public product information identifies forming, sintering and precision CNC machining as part of the manufacturing route and also lists precision grinding/polishing as available finishing methods.



Key Features

1. Excellent High-Temperature Stability
SiC trays are suitable for high-temperature processing environments and can maintain structural stability under demanding thermal conditions. Your published product data specifies an operating temperature of ≤1600°C, although the actual temperature capability depends on the specific SiC grade and process environment.

2. Excellent Thermal Conductivity
SiC offers high thermal conductivity, helping promote efficient heat transfer and more uniform temperature distribution.

3. Excellent Thermal Shock Resistance
It is well suited for applications involving repeated heating and cooling cycles.

4. High Mechanical Strength
SiC ceramics provide high mechanical strength and stiffness, helping maintain dimensional stability during long-term high-temperature operation.

5. Chemical & Plasma Resistance
SiC provides good chemical stability and resistance in demanding semiconductor environments involving corrosive gases and plasma.

6. Precision Machining
The tray can be machined according to customer drawings, including dimensions, slots, holes and complex structures, with grinding or polishing available according to application requirements.

7. Fully Customizable

• Diameter

• Thickness

• Slots

• Mounting Holes

• Structure

• Surface Finish

Your public product page explicitly supports OEM/ODM customization based on customer drawings or application requirements.


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Key Specifications

We can select materials based on the customer's requirements regarding temperature, atmosphere, purity, and contamination control.


Applications
1.Semiconductor Manufacturing:
Used for wafer support, carrying, transfer and high-temperature semiconductor processing.

2.CVD / PECVD Processing:
Suitable for CVD and PECVD processing systems.

3.Diffusion, Oxidation & Annealing:
Used in wafer diffusion, oxidation and high-temperature annealing processes.

4.RTP / Epitaxial Processing
Applicable to selected RTP and epitaxial processing systems.

5.LED & Optoelectronics
Applications include sapphire wafer processing, LED epitaxy carrier systems, and high-temperature substrate support.

6.Vacuum & Thermal Furnace
Used as high-temperature sintering trays, vacuum furnace carriers, and thermal processing fixtures.

7.Powder Metallurgy & Advanced Materials
Beyond semiconductor applications, SiC trays can also be used in powder metallurgy, advanced ceramic sintering, and battery-material thermal processing.

FAQ
Q1. What is a SiC Tray used for?
It is mainly used to support, carry, position and process wafers or other components in high-temperature semiconductor processes such as CVD, PECVD, diffusion, oxidation, annealing and RTP.

Q2. Can the SiC Tray be customized?
Yes. Dimensions, thickness, shape, slot geometry, mounting holes and complex structures can be customized based on customer drawings and application requirements.

Q3. What material options are available?
The published product range includes CVD SiC, SSiC and RBSiC. The appropriate material should be selected according to purity, operating temperature, process atmosphere, contamination requirements and cost targets.

Q4. What information is required for a quotation?
Material + Size + Thickness + Structure + Slot/Hole Details + Surface Finish + Tolerance + Quantity + Application + Operating Temperature
For non-standard products, a 2D drawing or 3D CAD file is highly recommended.

Q5. What is the maximum operating temperature?
Your current public SiC Tray product page specifies an operating temperature of ≤1600°C. The actual usable temperature should be confirmed according to the material grade and process environment.

Q6. Can the surface be polished?
Yes. Precision grinding or polishing can be provided according to the application requirements.

Q7. Can you provide OEM/ODM?
Yes. OEM/ODM customization is supported based on customer drawings and application requirements.

Q8. Why choose SiC instead of quartz or graphite?
SiC offers advantages in high-temperature stability, mechanical strength, thermal performance and chemical stability. However, material selection should always be based on the actual process rather than assuming that SiC is universally superior to quartz or graphite.




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