STP110N8F6 Mosfet Power Transistor 110 A, STripFET F6 Power MOSFET in a TO-220 package
Features
Order code |
VDS |
RDS(on)max |
ID |
PTOT |
STP110N8F6 |
80 V |
0.0065 Ω |
110 A |
200 W |
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFETTM F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.