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CSD17308Q3 CSD17308Q3T Ultra Low Qg Mosfet Motor Driver Circuit NCh NexFET Pwr Low Thermal Resistance
CSD17308Q3 CSD17308Q3T Ultra Low Qg Mosfet Motor Driver Circuit NCh NexFET Pwr Low Thermal Resistance
Specifications
Brand Name :
Ti
Model Number :
CSD17308Q3
MOQ :
Contact us
Price :
Contact us
Payment Terms :
Paypal, Western Union, TT
Supply Ability :
50000 Pieces per Day
Delivery Time :
The goods will be shipped within 3 days once received fund
Packaging Details :
SON8
Channel Mode :
Enhancement
Configuration :
Single
Minimum Operating Temperature :
- 55 C
Maximum Operating Temperature :
+ 150 C
CSD17308Q3 :
3.9 nC
Vgs - Gate-Source Voltage :
8 V
Description

CSD17308Q3 CSD17308Q3T Mosfet Power Transistor MOSFET 30V NCh NexFET Pwr MOSFET

1 Features

  • Optimized for 5-V Gate Drive

  • Ultra-Low Qg and Qgd

  • Low Thermal Resistance

  • Avalanche Rated

  • Pb Free Terminal Plating

  • RoHS Compliant

  • Halogen Free

  • VSON 3.3 mm × 3.3 mm Plastic Package

2 Applications

  • Notebook Point of Load

  • Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems

3 Description

This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFETTM power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.

Product Summary

TA = 25°C

VALUE

UNIT

VDS

Drain-to-source voltage

30

V

Qg

Gate charge total (4.5 V)

3.9

nC

Qgd

Gate charge gate to drain

0.8

nC

RDS(on)

Drain-to-source on resistance

VGS = 3 V

12.5

mΩ

VGS = 4.5 V

9.4

mΩ

VGS = 8 V

8.2

mΩ

VGS(th)

Threshold voltage

1.3

V

Ordering Information

DEVICE

QTY

MEDIA

PACKAGE

SHIP

CSD17308Q3

2500

13-Inch Reel

SON 3.3 mm × 3.3 mm Plastic Package

Tape and Reel

Absolute Maximum Ratings

TA = 25°C unless otherwise stated

VALUE

UNIT

VDS

Drain-to-source voltage

30

V

VGS

Gate-to-source voltage

+10 / –8

V

ID

Continuous Drain Current (Package Limited)

50

A

Continuous drain current, TC = 25°C

44

Continuous drain current(1)

14

IDM

Pulsed drain current, TA = 25°C(2)

167

A

PD

Power dissipation(1)

2.7

W

Power Dissipation, TC = 25°C

28

TJ, Tstg

Operating Junction and Storage Temperature Range

–55 to 150

°C

EAS

Avalanche energy, single pulse ID =36A,L=0.1mH,RG =25Ω

65

mJ

Product tags

tec driver circuit

,

motor isuzu 4hg1

,

isuzu 4hg1 engine specs
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CSD17308Q3 CSD17308Q3T Ultra Low Qg Mosfet Motor Driver Circuit NCh NexFET Pwr Low Thermal Resistance

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Product Detail
Brand Name :
Ti
Model Number :
CSD17308Q3
MOQ :
Contact us
Price :
Contact us
Payment Terms :
Paypal, Western Union, TT
Supply Ability :
50000 Pieces per Day
Contact Supplier
CSD17308Q3 CSD17308Q3T Ultra Low Qg Mosfet Motor Driver Circuit NCh NexFET Pwr Low Thermal Resistance

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Main Products :
Flash Memory IC Chip, Programmable IC Chip, Computer IC Chips
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
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