SI4425DDY-T1-GE3 Mosfet Power Transistor MOSFET -30V Vds 20V Vgs SO-8
FEATURES
TrenchFET® Power MOSFET
100 % Rg Tested
APPLICATIONS
•Load Switches
- Notebook PCs
- Desktop PCs
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PRODUCT SUMMARY |
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VDS (V) |
RDS(on) (Ω) |
ID (A)a |
Qg (Typ.) |
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- 30 |
0.0098 at VGS = 10 V |
- 19.7 |
27 nC |
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0.0165 at VGS = 4.5 V |
- 15.2 |
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ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted |
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Parameter |
Symbol |
Limit |
Unit |
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Drain-Source Voltage |
VDS |
- 30 |
V |
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Gate-Source Voltage |
VGS |
± 20 |
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Continuous Drain Current (TJ = 150 °C) |
TC =25°C |
ID |
- 19.7 |
A |
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TC =70°C |
- 15.7 |
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TA = 25 °C |
- 13b, c |
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TA = 70 °C |
- 10.4b, c |
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Pulsed Drain Current |
IDM |
- 50 |
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Continous Source-Drain Diode Current |
TC =25°C |
IS |
- 4.7 |
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TA = 25 °C |
- 2.1b, c |
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Maximum Power Dissipation |
TC =25°C |
PD |
5.7 |
W |
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TC =70°C |
3.6 |
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TA = 25 °C |
2.5b, c |
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TA = 70 °C |
1.6b, c |
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Operating Junction and Storage Temperature Range |
TJ, Tstg |
- 55 to 150 |
°C |
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THERMAL RESISTANCE RATINGS |
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Parameter |
Symbol |
Typical |
Maximum |
Unit |
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Maximum Junction-to-Ambientb, d |
t ≤ 10 s |
RthJA |
35 |
50 |
°C/W |
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Maximum Junction-to-Foot (Drain) |
Steady State |
RthJF |
18 |
22 |
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