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N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G
N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G
Specifications
Brand Name :
ONSEMI
Model Number :
NDD04N60ZT4G
Certification :
Original Factory Pack
Place of Origin :
Original
MOQ :
5pcs
Price :
Negotiation
Payment Terms :
T/T, Western Union,PayPal
Supply Ability :
290PCS
Delivery Time :
1 Day
Packaging Details :
please contact me for details
Description :
N-Channel 600 V 4.1A (Tc) 83W (Tc) Surface Mount DPAK
VDSS :
600 V
ID :
4.8- 4.1 A
IDM :
20 A
PD :
30- 83 W
VGS :
±30 V
Description

N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G

Features

• Low ON Resistance

• Low Gate Charge

• ESD Diode−Protected Gate

• 100% Avalanche Tested

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.

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Product tags

bd249c transistor

,

5401dm transistor

,

rfp70n06 mosfet
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N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G

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Product Detail
Brand Name :
ONSEMI
Model Number :
NDD04N60ZT4G
Certification :
Original Factory Pack
Place of Origin :
Original
MOQ :
5pcs
Price :
Negotiation
Contact Supplier
N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G

ChongMing Group (HK) Int'l Co., Ltd

Active Member
3 Years
shenzhen
Since 2008
Business Type :
Distributor/Wholesaler
Main Products :
Flash Memory IC Chip, Programmable IC Chip, Computer IC Chips
Total Annual :
5000000-7000000
Employee Number :
80~100
Certification Level :
Active Member
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