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General Purpose Fast Recovery Epitaxial Diode 1.0 Ampere 800 Voltage DO-41
General Purpose Fast Recovery Epitaxial Diode 1.0 Ampere 800 Voltage DO-41
General Purpose Fast Recovery Epitaxial Diode 1.0 Ampere 800 Voltage DO-41
General Purpose Fast Recovery Epitaxial Diode 1.0 Ampere 800 Voltage DO-41
Specifications
Brand Name :
Huixin
Model Number :
HER107 DO-41
Certification :
ISO14001 ISO9001 ISO/TS16949 UL
Place of Origin :
China
MOQ :
5000 PCS
Price :
Negotiable
Payment Terms :
T/T, Paypal, Cash
Supply Ability :
1 billion pieces/ Month
Delivery Time :
2-4Weeks
Packaging Details :
5000pcs/reel/box
Type :
Epitaxial Super Fast diode
Package :
DO-41
MPQ :
5000PCS
Samples :
Free
Sample Time :
5-7 Days
Lead Free Status :
RoHS
Current :
1.0Amp
Voltage :
800V
Description

General Purpose Fast Recovery Epitaxial Diode 1.0 Ampere 800 Voltage DO-41

HER101~HER108 DO-41 Datasheet.pdf

Features:

​

  • The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
  • Open Junction chip
  • Low reverse leakage
  • High forward surge current capability
  • High temperature soldering guaranteed

Mechanical Data:

  • Case : Molded plastic body
  • Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
  • Polarity : Polarity symbol marking on body
  • Mounting Position : Any
  • Weight : 0.0088 ounce, 0.25 grams

Maximum Ratings And Electrical Characteristics:

Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Parameter

SYMBOLS

 HER101 HER102 HER103 HER104 HER105 HER106 HER107 HER108 UNITS
Maximum Repetitive Peak Reverse Voltage

VRRM

 50 100 200 300 400 600 800 1000 Volts
Maximum RMS Voltage

VRMS

 35 70 140 210 280 420 560 700 Volts
Maximum DC Blocking Voltage

VDC

 50 100 200 300 400 600 800 1000 Volts
Maximum Average Forward Rectifier Current at TL=100°C

IF(AV)

 1.0 Amps
Peak Forward Surge Current ,8.3msSingle Half Sine-Wave Superimposed on rated load

IFSM

 35 Amps
Maximum Instantaneous Forward Voltage at 1A

VF

 1 1.4 1.7 Volts
Maximum DC Reverse Current at rated DC blocking voltage TA=25°C

IR

10

 μA
TA=125°C

500
Maximum Reverse Recovery Time

Trr

 50 75 ns


Note: 1.Reverse recovery condition IF =0.5A,IR =1.0A,Irr=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.


1. Hot Sellings

General Purpose Fast Recovery Epitaxial Diode 1.0 Ampere 800 Voltage DO-41

Product tags

fast recovery diode datasheet

,

diode in 5408

,

1200v fast recovery diode
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General Purpose Fast Recovery Epitaxial Diode 1.0 Ampere 800 Voltage DO-41

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Product Detail
Brand Name :
Huixin
Model Number :
HER107 DO-41
Certification :
ISO14001 ISO9001 ISO/TS16949 UL
Place of Origin :
China
MOQ :
5000 PCS
Price :
Negotiable
Contact Supplier
General Purpose Fast Recovery Epitaxial Diode 1.0 Ampere 800 Voltage DO-41
General Purpose Fast Recovery Epitaxial Diode 1.0 Ampere 800 Voltage DO-41

Guangdong Huixin Electronics Technology Co., Ltd.

Active Member
7 Years
guangdong, dongguan
Since 2010
Business Type :
Manufacturer, Exporter, Seller
Main Products :
Fast Recovery Rectifier Diode, General Purpose Rectifier Diode, Schottky Barrier Rectifier Diode
Total Annual :
500million-600million
Employee Number :
480~520
Certification Level :
Active Member
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