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SI2306BDS-T1-GE3 MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V
SI2306BDS-T1-GE3 MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V
Specifications
Brand Name :
Vishay
Model Number :
SI2306BDS-T1-GE3
Place of Origin :
United States
MOQ :
1
Price :
USD 0.01-20/piece
Payment Terms :
T/T
Delivery Time :
5-8 work days
Packaging Details :
SMD/SMT
product :
MOSFET
Installation style :
SMD/SMT
package/box :
SOT-23-3
series :
SI2
encapsulation :
Reel，Cut Tape，MouseReel
Product type :
MOSFETs
unit weight :
8 mg
Description

Manufacturer: Vishay
Product category: MOSFET
Technology: si
Installation style: SMD/SMT
Package/box: SOT-23-3
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds- Drain-source breakdown voltage: 30 V.
Id- continuous drain current: 3.16a.
Rds On- drain-source on resistance: 47 mOhms.
Vgs-gate-source voltage: - 20 V,+20 V
Vgs th- gate-source threshold voltage: 3 V
Qg- gate charge: 3 nC
Minimum operating temperature:-55 C.
Maximum operating temperature:+150 C.
Pd- power dissipation: 750 mW
Channel mode: Enhancement
Trade name: TrenchFET
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Vishay/Siliconix
Configuration: Single
Descending time: 6 ns
Product type: MOSFETs
Rise time: 12 ns
Series: SI2
Subcategory: Transistors
Transistor type: 1 N-Channel
Typical closing delay time: 14 ns
Typical turn-on delay time: 7 ns
Part number alias: SI2306BDS-T1-BE3 SI2306BDS-GE3-ge3
Unit weight: 8 mg

SI2306BDS-T1-GE3.pdf

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SI2306BDS-T1-GE3 MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V

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Product Detail
Brand Name :
Vishay
Model Number :
SI2306BDS-T1-GE3
Place of Origin :
United States
MOQ :
1
Price :
USD 0.01-20/piece
Payment Terms :
T/T
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video
SI2306BDS-T1-GE3 MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V

Shenzhen Hefengxin Technology Co., Ltd.

Verified Supplier
2 Years
shenzhen
Since 2016
Business Type :
Agent
Main Products :
Integrated Circuit IC, Multilayer Ceramic Capacitor, Thick Film Resistor
Total Annual :
1000000-2000000
Employee Number :
100~120
Certification Level :
Verified Supplier
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