Specifications
Brand Name :
Toshiba
Model Number :
2SK2009TE85LF
Place of Origin :
Japan
MOQ :
1
Price :
USD 0.01-20/piece
Payment Terms :
T/T
Delivery Time :
5-8 work days
Packaging Details :
SMD/SMT SOT-346-3
product :
MOSFET
Installation style :
SMD/SMT
Package/box :
SOT-346-3
encapsulation :
Reel,Cut Tape,MouseReel
Product type :
MOSFETs
series :
2SK2009
unit weight :
12 mg
Description

Manufacturer: Toshiba
Product category: MOSFET
Technology: si
Installation style: SMD/SMT
Package/box: SOT-346-3
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds- Drain-source breakdown voltage: 30 V.
Id- continuous drain current: 200ma
Rds On- drain-source on resistance: 2 Ohms
Vgs-gate-source voltage: - 20 V,+20 V
Vgs th- gate-source threshold voltage: 1.5 v.
Minimum operating temperature:-55 C.
Maximum operating temperature:+150 C.
Pd- power dissipation: 200mw
Channel mode: Enhancement
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Toshiba
Configuration: Single
Forward transconductance-minimum: 100 mS
Height: 1.1 mm
Length: 2.9 mm
Product type: MOSFETs
Series: 2SK2009
Subcategory: Transistors
Transistor type: 1 N-Channel
Type: RF Small Signal MOSFET
Typical closing delay time: 0.12 us
Typical turn-on delay time: 0.06 us
Width: 1.5 mm
Unit weight: 12 mg

2SK2009.pdf

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2SK2009TE85LF MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V

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Brand Name :
Toshiba
Model Number :
2SK2009TE85LF
Place of Origin :
Japan
MOQ :
1
Price :
USD 0.01-20/piece
Payment Terms :
T/T
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video
2SK2009TE85LF MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V
2SK2009TE85LF MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V
2SK2009TE85LF MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V
2SK2009TE85LF MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V

Shenzhen Hefengxin Technology Co., Ltd.

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Since 2016
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