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BFP 640ESD H6327
BFP 640ESD H6327
Specifications
Transistor Polarity : :
NPN
Technology : :
SiGe
Product Category : :
RF Bipolar Transistors
Mounting Style : :
SMD/SMT
Transistor Type : :
Bipolar
Collector- Emitter Voltage VCEO Max : :
4.1 V
Package / Case : :
SOT-343
DC Collector/Base Gain hfe Min : :
110
Packaging : :
Reel
Configuration : :
Single Dual Emitter
Manufacturer : :
Infineon Technologies
Continuous Collector Current : :
50 mA
Description :
RF Bipolar Transistors RF BIP TRANSISTORS
Description
The BFP 640ESD H6327,from Infineon Technologies,is RF Bipolar Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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BFP 640ESD H6327

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Product Detail
Transistor Polarity : :
NPN
Technology : :
SiGe
Product Category : :
RF Bipolar Transistors
Mounting Style : :
SMD/SMT
Transistor Type : :
Bipolar
Collector- Emitter Voltage VCEO Max : :
4.1 V
Contact Supplier
BFP 640ESD H6327

Beijing Silk Road Enterprise Management Services Co.,LTD

Verified Supplier
2 Years
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer, Exporter, Trading Company
Main Products :
16-bit Microcontrollers - MCU, AC/DC Converters, Analog & Digital Crosspoint ICs
Employee Number :
600~800
Certification Level :
Verified Supplier
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