Specifications
Gate-Emitter Leakage Current : :
+/- 100 nA
Product Category : :
IGBT Transistors
Mounting Style : :
Through Hole
Continuous Collector Current at 25 C : :
6 A
Pd - Power Dissipation : :
25 W
Collector- Emitter Voltage VCEO Max : :
1200 V
Package / Case : :
TO-220-3 FP
Maximum Operating Temperature : :
+ 150 C
Maximum Gate Emitter Voltage : :
+/- 20 V
Packaging : :
Tube
Configuration : :
Single
Collector-Emitter Saturation Voltage : :
2.8 V
Manufacturer : :
STMicroelectronics
Description :
IGBT Transistors N-Ch 1200 Volt 3 Amp
Description
The STGF3NC120HD,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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STGF3NC120HD

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Gate-Emitter Leakage Current : :
+/- 100 nA
Product Category : :
IGBT Transistors
Mounting Style : :
Through Hole
Continuous Collector Current at 25 C : :
6 A
Pd - Power Dissipation : :
25 W
Collector- Emitter Voltage VCEO Max : :
1200 V
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STGF3NC120HD
STGF3NC120HD
STGF3NC120HD

Beijing Silk Road Enterprise Management Services Co.,LTD

Verified Supplier
3 Years
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer, Exporter, Trading Company
Employee Number :
600~800
Certification Level :
Verified Supplier
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