Gate-Emitter Leakage Current : :
+/- 100 nA
Product Category : :
IGBT Transistors
Mounting Style : :
Through Hole
Continuous Collector Current at 25 C : :
6 A
Pd - Power Dissipation : :
25 W
Collector- Emitter Voltage VCEO Max : :
1200 V
Package / Case : :
TO-220-3 FP
Maximum Operating Temperature : :
+ 150 C
Maximum Gate Emitter Voltage : :
+/- 20 V
Collector-Emitter Saturation Voltage : :
2.8 V
Manufacturer : :
STMicroelectronics
Description :
IGBT Transistors N-Ch 1200 Volt 3 Amp