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SQJ409EP-T1_GE3
SQJ409EP-T1_GE3
Specifications
Transistor Polarity : :
P-Channel
Product Category : :
MOSFET
Qualification : :
AEC-Q101
Id - Continuous Drain Current : :
60 A
Pd - Power Dissipation : :
68 W
Vds - Drain-Source Breakdown Voltage : :
40 V
Packaging : :
Tape & Reel (TR)
Vgs th - Gate-Source Threshold Voltage : :
2 V
Package : :
PowerPAK-SO-8-4
Rds On - Drain-Source Resistance : :
7 mOhms
RoHS : :
Green available
Factory Pack Quantity : :
3000
Vgs - Gate-Source Voltage : :
- 20 V, + 20 V
Qg - Gate Charge : :
170 nC
Manufacturer : :
Vishay Semiconductors
Description :
MOSFET -40V Vds PowerPAK AEC-Q101 Qualified
Description
The SQJ409EP-T1_GE3,from Vishay Semiconductors,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Product tags

LM339ADRG4

,

THS4503IDGNRG4

,

K4S561633F
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SQJ409EP-T1_GE3

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Product Detail
Transistor Polarity : :
P-Channel
Product Category : :
MOSFET
Qualification : :
AEC-Q101
Id - Continuous Drain Current : :
60 A
Pd - Power Dissipation : :
68 W
Vds - Drain-Source Breakdown Voltage : :
40 V
Contact Supplier
SQJ409EP-T1_GE3

Beijing Silk Road Enterprise Management Services Co.,LTD

Verified Supplier
2 Years
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer, Exporter, Trading Company
Main Products :
16-bit Microcontrollers - MCU, AC/DC Converters, Analog & Digital Crosspoint ICs
Employee Number :
600~800
Certification Level :
Verified Supplier
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