SRAM 18Mbit Static RAM High-performance COMS Static Random Access Memory CY7C1381KV33-133AXI
Features■ Supports 133 MHz bus operations■ 512K × 36 and 1M × 18 common I/O■ 3.3 V core power supply (VDD)■ 2.5 V or 3.3 V I/O supply (VDDQ)■ Fast clock-to-output time❐ 6.5 ns (133 MHz version)■ Provides high performance 2-1-1-1 access rate■ User selectable burst counter supporting interleaved or linearburst sequences■ Separate processor and controller address strobes■ Synchronous self-timed write■ Asynchronous output enable■ CY7C1381KV33/CY7C1381KVE33 available inJEDEC-standard Pb-free 100-pin TQFP, Pb-free 165-ballFBGA package. CY7C1383KV33/CY7C1383KVE33 availablein JEDEC-standard Pb-free 100-pin TQFP.■ IEEE 1149.1 JTAG-Compatible Boundary Scan■ ZZ sleep mode option.■ On-chip error correction code (ECC) to reduce soft error rate(SER)
Functional DescriptionThe CY7C1381KV33/CY7C1381KVE33/CY7C1383KV33/CY7C1383KVE33 are a 3.3 V, 512K × 36 and 1M × 18synchronous flow through SRAMs, designed to interface withhigh speed microprocessors with minimum glue logic. Maximumaccess delay from clock rise is 6.5 ns (133 MHz version). A 2-biton-chip counter captures the first address in a burst andincrements the address automatically for the rest of the burstaccess. All synchronous inputs are gated by registers controlledby a positive edge triggered clock input (CLK). The synchronousinputs include all addresses, all data inputs, address pipeliningchip enable (CE1), depth-expansion chip enables (CE2 andCE3), burst control inputs (ADSC, ADSP, and ADV), writeenables (BWx, and BWE), and global write (GW). Asynchronousinputs include the output enable (OE) and the ZZ pin.The CY7C1381KV33/CY7C1381KVE33/CY7C1383KV33/CY7C1383KVE33 allows interleaved or linear burst sequences,selected by the MODE input pin. A HIGH selects an interleavedburst sequence, while a LOW selects a linear burst sequence.Burst accesses can be initiated with the processor addressstrobe (ADSP) or the cache controller address strobe (ADSC)inputs. Address advancement is controlled by the addressadvancement (ADV) input.Addresses and chip enables are registered at rising edge ofclock when address strobe processor (ADSP) or address strobecontroller (ADSC) are active. Subsequent burst addresses canbe internally generated as controlled by the advance pin (ADV).CY7C1381KV33/CY7C1381KVE33/CY7C1383KV33/CY7C1383KVE33 operates from a +3.3 V core power supplywhile all outputs operate with a +2.5 V or +3.3 V supply. All inputsand outputs are JEDEC-standard and JESD8-5-compatible.
Infineon | |
Product Category: | SRAM |
RoHS: | |
18 Mbit | |
512 k x 36 | |
6.5 ns | |
133 MHz | |
Parallel | |
3.6 V | |
3.135 V | |
149 mA | |
- 40 C | |
+ 85 C | |
SMD/SMT | |
TQFP-100 | |
Tray | |
Brand: | Infineon Technologies |
Memory Type: | Volatile |
Moisture Sensitive: | Yes |
Product Type: | SRAM |
360 | |
Subcategory: | Memory & Data Storage |
Type: | Synchronous |
Unit Weight: | 0.503444 oz |
Packaging and transportation instructions
- According to the standard export packaging.
Customers can choose from cartons, wooden cases and wooden pallets according to their own requirements.
Q&A
1. How to obtain the price?
We usually quote within 24 hours after receiving your inquiry (except weekends and holidays). If you are in urgent need of a price, please send us an email or contact us in any other way so that we can provide you with a quotation.
2. What is your delivery time?
This depends on the quantity of the order and the season in which you place the order. Usually, we can ship the goods within 7 to 15 days (for small batches), and for large batches, it takes about 30 days.
3. What are your payment terms?
Factory price, 30% deposit, 70%T/T payment before shipment.
4. What is the mode of transportation?
It can be transported by sea, air or express delivery (EMS, UPS, DHL, TNT, FEDEX, etc.). Please confirm with us before placing an order.
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We maintain good quality and competitive prices to ensure that our customers benefit.
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