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MT41J128M16JT-125:K 2Gb：X4 X8 X16 DDR3 SDRAM
MT41J128M16JT-125:K 2Gb：X4 X8 X16 DDR3 SDRAM
MT41J128M16JT-125:K 2Gb：X4 X8 X16 DDR3 SDRAM
MT41J128M16JT-125:K 2Gb：X4 X8 X16 DDR3 SDRAM
MT41J128M16JT-125:K 2Gb：X4 X8 X16 DDR3 SDRAM
MT41J128M16JT-125:K 2Gb：X4 X8 X16 DDR3 SDRAM
MT41J128M16JT-125:K 2Gb：X4 X8 X16 DDR3 SDRAM
MT41J128M16JT-125:K 2Gb：X4 X8 X16 DDR3 SDRAM
Specifications
Brand Name :
micron
Model Number :
MT41J128M16JT-125:K
Certification :
rohs
Place of Origin :
CN
MOQ :
1
Price :
consult with
Payment Terms :
T/T,Western Union
Supply Ability :
100000
Delivery Time :
5-8days
Packaging Details :
T/R
Operating Temperature :
0℃~+95℃
operating voltage :
1.425V~1.575V
Memory architecture (format) :
DDR3 SDRAM
Storage Capadity :
2Gbit
Clock Frequency (fc) :
800MHz
operating current :
49mA
Description
MT41J128M16JT-125:K 2Gb DDR3 SDRAM
High-performance 2Gb DDR3 SDRAM available in X4, X8, and X16 configurations for industrial and manufacturing applications.
DDR3 SDRAM Configurations
MT41J512M4 – 64 Meg x 4 x 8 Banks
MT41J256M8 – 32 Meg x 8 x 8 Banks
MT41J128M16 – 16 Meg x 16 x 8 Banks
Key Features
  • VDD = VDDQ = 1.5V ±0.075V
  • 1.5V center-terminated push/pull I/O
  • Differential bidirectional data strobe
  • 8n-bit prefetch architecture
  • Differential clock inputs (CK, CK#)
  • 8 internal banks
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Programmable CAS READ latency (CL)
  • Posted CAS additive latency (AL)
  • Programmable CAS WRITE latency (CWL) based on tCK
  • Fixed burst length (BL) of 8 and burst chop (BC) of 4 via mode register set (MRS)
  • Selectable BC4 or BL8 on-the-fly (OTF)
  • Self refresh mode
  • Operating temperature: 0°C to 95°C
  • 64ms, 8192 cycle refresh at 0°C to 85°C
  • 32ms, 8192 cycle refresh at 85°C to 95°C
  • Self refresh temperature (SRT)
  • Automatic self refresh (ASR)
  • Write leveling
  • Multipurpose register
  • Output driver calibration
Technical Specifications
Parameter 512 Meg x 4 256 Meg x 8 128 Meg x 16
Configuration 64 Meg x 4 x 8 banks 32 Meg x 8 x 8 banks 16 Meg x 16 x 8 banks
Refresh count 8K 8K 8K
Row addressing 32K (A[14:0]) 32K (A[14:0]) 16K (A[13:0])
Bank addressing 8 (BA[2:0]) 8 (BA[2:0]) 8 (BA[2:0])
Column addressing 2K (A[11, 9:0]) 1K (A[9:0]) 1K (A[9:0])
Page size 1KB 1KB 2KB
MT41J128M16JT-125:K 2Gb：X4 X8 X16 DDR3 SDRAM MT41J128M16JT-125:K 2Gb：X4 X8 X16 DDR3 SDRAM MT41J128M16JT-125:K 2Gb：X4 X8 X16 DDR3 SDRAM
Packaging & Shipping
Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their specific requirements.
Frequently Asked Questions
How to obtain the price?
We typically provide quotations within 24 hours of receiving your inquiry (excluding weekends and holidays). For urgent pricing requests, please contact us directly.
What is your delivery time?
Small batches typically ship within 7-15 days, while large batch orders may require approximately 30 days depending on order quantity and season.
What are your payment terms?
Factory pricing with 30% deposit and 70% balance payment via T/T before shipment.
What are the shipping options?
Available shipping methods include sea freight, air freight, and express delivery (EMS, UPS, DHL, TNT, FEDEX). Please confirm your preferred method before ordering.
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MT41J128M16JT-125:K 2Gb：X4 X8 X16 DDR3 SDRAM

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Product Detail
Brand Name :
micron
Model Number :
MT41J128M16JT-125:K
Certification :
rohs
Place of Origin :
CN
MOQ :
1
Price :
consult with
Contact Supplier
MT41J128M16JT-125:K 2Gb：X4 X8 X16 DDR3 SDRAM
MT41J128M16JT-125:K 2Gb：X4 X8 X16 DDR3 SDRAM
MT41J128M16JT-125:K 2Gb：X4 X8 X16 DDR3 SDRAM
MT41J128M16JT-125:K 2Gb：X4 X8 X16 DDR3 SDRAM

Shenzhen Filetti Technology Co., LTD

Verified Supplier
1 Years
shenzhen
Since 2022
Business Type :
Distributor/Wholesaler, Trading Company
Main Products :
FPGA Field Programmable Gate Array, MCU Microcontroller Unit, SOC System On Chip
Total Annual :
1000000-3000000
Employee Number :
100~150
Certification Level :
Verified Supplier
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