IS43/46TR16128B, IS43/46TR16128BL,IS43/46TR82560B, IS43/46TR82560BL
256Mx8, 128Mx16 2Gb DDR3 SDRAM
FEATURES
- Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
- Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
- High speed data transfer rates with systemfrequency up to 1066 MHz
- 8 internal banks for concurrent operation
- 8n-Bit pre-fetch architecture
- Programmable CAS Latency
- Programmable Additive Latency: 0, CL-1,CL-2
- Programmable CAS WRITE latency (CWL) basedon tCK
- Programmable Burst Length: 4 and 8
- Programmable Burst Sequence: Sequential orInterleave
- BL switch on the fly
- Auto Self Refresh(ASR)
- Self Refresh Temperature(SRT)
- Refresh Interval:
- 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
- 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
- Partial Array Self Refresh
- Asynchronous RESET pin
- TDQS (Termination Data Strobe) supported (x8only)
- OCD (Off-Chip Driver Impedance Adjustment)
- Dynamic ODT (On-Die Termination)
- Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
- Write Leveling
- Up to 200 MHz in DLL off mode
- Operating temperature:
- Commercial (TC = 0°C to +95°C)
- Industrial (TC = -40°C to +95°C)
- Automotive, A1 (TC = -40°C to +95°C)
- Automotive, A2 (TC = -40°C to +105°C)
OPTIONS
- Configuration:
- Package:
- 96-ball BGA (9mm x 13mm) for x16
- 78-ball BGA (8mm x 10.5mm) for x8
ADDRESS TABLE
| Parameter | 256Mx8 | 128Mx16 |
| Row Addressing | A0-A14 | A0-A13 |
| Column Addressing | A0-A9 | A0-A9 |
| Bank Addressing | BA0-2 | BA0-2 |
| Page size | 1KB | 2KB |
| Auto PrechargeAddressing | A10/AP | A10/AP |
| BL switch on the fly | A12/BC# | A12/BC# |
SPEED BIN
| Speed Option | 15H | 125K | 107M | 093N | Units |
| JEDEC Speed Grade | DDR3-1333H | DDR3-1600K | DDR3-1866M | DDR3-2133N | |
| CL-nRCD-nRP | 9-9-9 | 11-11-11 | 13-13-13 | 14-14-14 | tCK |
| tRCD,tRP(min) | 13.5 | 13.75 | 13.91 | 13.09 | ns |


