DYNAMIC RANDOM ACCESS MEMORY DRAM IS43TR16256BL-125KBLI 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96
IS43/46TR16256B, IS43/46TR16256BL,IS43/46TR85120B, IS43/46TR85120BLIntegrated Silicon Solution, 512Mx8, 256Mx16 4Gb DDR3 SDRAM
FEATURES
- Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
- Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
- High speed data transfer rates with system frequency upto 1066 MHz
- 8 internal banks for concurrent operation
- 8n-Bit pre-fetch architecture
- Programmable CAS Latency
- Programmable Additive Latency: 0, CL-1,CL-2
- Programmable CAS WRITE latency (CWL) based on tCK
- Programmable Burst Length: 4 and 8
- Programmable Burst Sequence: Sequential or Interleave
- BL switch on the fly
- Auto Self Refresh(ASR)
- Self Refresh Temperature(SRT)
- Refresh Interval:7.8 µs (8192 cycles/64 ms) Tc= -40°C to 85°C3.9 µs (8192 cycles/32 ms) Tc= 85°C to 105°C
- Partial Array Self Refresh
- Asynchronous RESET pin
- TDQS (Termination Data Strobe) supported (x8 only)
- OCD (Off-Chip Driver Impedance Adjustment)
- Dynamic ODT (On-Die Termination)
- Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
- Write Leveling
- Up to 200MHz in DLL off mode
- Operating temperature:Commercial (TC = 0°C to +95°C)Industrial (TC = -40°C to +95°C)Automotive, A1 (TC = -40°C to +95°C)Automotive, A2 (TC = -40°C to +105°C)Automotive, A25 (TC = -40°C to +115°C)Automotive, A3 (TC = -40°C to +125°C)1.95 µs (8192 cycles/16 ms) Tc= 105°C to 115°C0.97 µs (8192 cycles/8 ms) Tc= 115°C to 125°C
ADDRESS TABLE
| Parameter | 512Mx8 | 256Mx16 |
| Row Addressing | A0-A15 | A0-A14 |
| Column Addressing | A0-A9 | A0-A9 |
| Bank Addressing | BA0-2 | BA0-2 |
| Page size | 1KB | 2KB |
| Auto Precharge Addressing | A10/AP | A10/AP |
| BL switch on the fly | A12/BC# | A12/BC# |
OPTIONS
- Configuration: 512Mx8, 256Mx16
- Package:96-ball BGA (9mm x 13mm) for x1678-ball BGA (8mm x 10.5mm) for x8


