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LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film
LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film
LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film
LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film
Specifications
Model Number :
SCR-2026-27-01
Delivery Time :
5-6weeks
Lattice Constant :
a=5.357A c=13.22 A
Cystal Structure :
hexagonal crystal system
Density :
6.52g/cm3
Mohs Hardness :
6.5
Growth Method :
Czochralski
melting point :
2080°C
TanS Loss :
~3x10-4@300K,~0.6x10-4@77K
Molecular Formula :
LaAlO3
Dielectric Constant :
ε=21
Coefficient of thermalexpansion :
10x10-6/K
Place of Origin :
China
Payment Terms :
T/T, Western Union,MoneyGram,Paypal
Brand Name :
Crystro
Description

LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

Lanthanum aluminum oxide (LaAlO3) is a high-temperature superconducting single-crystal substrate material. It is an excellent substrate material for the epitaxial growth of high-temperature superconducting thin films and giant magnetic thin films. Its superior dielectric properties make it suitable for the fabrication of low-loss microwave amplifiers and dielectric resonant devices.

Size Φ76.2mm
Thickness 0.5mm or customer customization
Polishing Double or single throwing
Crystal optics <100>,<110>,<111>
Surface Roughness Ra Ra≤1nm
Crystalline precision ±0.2°
Positioning edge accuracy 2° (customizable within 1°)

Lanthanum aluminate (LaAlO3) single crystal is a kind of industrial, large-size HTS thin film substrate single crystal material. LaAlO3 crystal matches well with many kinds of perovskite structure materials, and is the substrate material for epitaxial growth of high temperature superconducting films and giant magnetoresistance films. At the same time, lanthanum aluminum crystals have a low dielectric constant and good microwave dielectric performance, so they are suitable for low-loss microwave amplifier devices and dielectric resonance applications.

Main characteristics:

Low dielectric loss

The lattice matches well

Small coefficient of thermal expansion

Good chemical stability

Good thermal stability

Typical applications:

High-temperature superconducting thin film extension substrate

Giant magnetic film outer lining

Microwave amplification and dielectric resonance

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LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

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Product Detail
Model Number :
SCR-2026-27-01
Delivery Time :
5-6weeks
Lattice Constant :
a=5.357A c=13.22 A
Cystal Structure :
hexagonal crystal system
Density :
6.52g/cm3
Mohs Hardness :
6.5
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LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film
LaAlO3 Lanthanum Aluminate Single Crystal Substrate for High-Temperature Superconducting & Giant Magnetoresistance Thin Film

ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

Verified Supplier
8 Years
anhui, hefei
Since 2016
Business Type :
Manufacturer, Exporter
Main Products :
Magneto Optical Crystals, Single Crystal Substrates, Piezoelectric Effect Crystals
Total Annual :
1,100,000-1,500,000
Employee Number :
110~120
Certification Level :
Verified Supplier
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