MachineU > China Products > Machinery > Industry Laser Equipment > Laser Equipment Parts
LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems
LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems
LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems
LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems
LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems
LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems
LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems
LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems
Specifications
Wavelength :
1064 nm
Payment Terms :
T/T, Western Union,MoneyGram,Paypal
Place of Origin :
China
λ/2 Voltage (V@632.8 nm) :
400/800
Model Number :
PCR-2026-13-01
Size :
55*28*24 mm
Extinction Ratio :
200:1 (Φ1 mm Area)
λ/4 Voltage (V@1064 nm) :
1800-1900/2100
Brand Name :
Crystro
Wavefront Distortion :
< λ/8@632.8 nm
Electrode Type :
Au/Cr
Insertion Loss :
< 3%
Aperture, mm :
2.5/5/8/9
Delivery Time :
3-4weeks
Description

LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems

LN (LiNbO3) Pockels Cell, is a comprehensive and excellent pockels cell.The device is widely used in optical communication and optical waveguide technology and other fields. It features high electro-optical coefficient, non-hygroscopicity, wide transparency range, and excellent mechanical and physical properties, making it suitable for applications such as electro-optical modulators, modulated resonator wave voltage external laser beams, etc.

Clear aperture Shell Size Half-wave lambda/4 Voltage
CPMLPC-09-1064nm-Q 9mm Dia.30mm x L26mm 2100V λ/4 at 1064nm Electro-optic Q-Switching
CPMLPC-09-1064-Q-S 9mm

Square design

18 x 17 x 20mm		 2100V λ/4 at 1064nm Electro-optic Q-Switching
CPLNPC-090925-3031-1064 9mm Dia.30 x 31mm

1700V λ/4 at 1064nm

Electro-optic Q-Switching
Transmittance >98% Transmission distortion of the crystal λ/6 @ 633nm
Insertion Loss 2% Crystal Flatness λ/8 @ 633nm
Recommended Qswitched Output Energy 100 mJ Extinction Ratio 300:1 - 500:1
Capacitance 5pF Xsurface with Au/Cr electrode
Damage Threshold 00 MW/cm2 1064nm 10ns 10Hz (LN Q Switch

Lithium niobate crystal is one of the most commonly used materials for Q-switches and phase modulators due to its high electro-optical coefficient, non-hygroscopicity, good transmission up to 4.0 µm, and transverse mode operation.

By applying an electric field transverse to the direction of light propagation, the LiNbO3 cell can be configured to operate at a lower voltage than KD*P cells. The LiNbO3 Pockels Cell supports infrared wavelength operation up to 4.0 µm, making it an excellent choice for low-to-medium power solid-state laser (Er:YAG, Ho:YAG, Tm:YAG pulsed lasers) applications. Meanwhile, compared with conventional undoped LiNbO3, MgO-doped LiNbO3 has a significantly higher damage threshold.

Features

High-Speed Modulation Capability
Wide Transmittance Range
Low Driving Voltage
Excellent Physicochemical StabilityLN (LiNbO3) Pockels Cell

Send your message to this supplier
Send Now

LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems

Ask Latest Price
Product Detail
Wavelength :
1064 nm
Payment Terms :
T/T, Western Union,MoneyGram,Paypal
Place of Origin :
China
λ/2 Voltage (V@632.8 nm) :
400/800
Model Number :
PCR-2026-13-01
Size :
55*28*24 mm
Contact Supplier
LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems
LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems
LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems
LN (LiNbO3) Pockels Cells – High Electro-Optic Coefficient, Low Half Wave Voltage, High Damage Threshold, AR Coated, for Q-Switch, Phase Modulator, Laser Communication & Industrial Laser Systems

ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

Verified Supplier
8 Years
anhui, hefei
Since 2016
Business Type :
Manufacturer, Exporter
Main Products :
Magneto Optical Crystals, Single Crystal Substrates, Piezoelectric Effect Crystals
Total Annual :
1,100,000-1,500,000
Employee Number :
110~120
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Pockels Cell Q Switch
MachineU China Products Machinery Industry Laser Equipment Laser Equipment Parts
Contact Supplier
Submit Requirement