EU RoHS |
Compliant |
ECCN (US) |
EAR99 |
Part Status |
Active |
Automotive |
No |
PPAP |
No |
Product Category |
Power MOSFET |
Material |
Si |
Configuration |
Single |
Process Technology |
HEXFET |
Channel Mode |
Enhancement |
Channel Type |
P |
Number of Elements per Chip |
1 |
Maximum Drain Source Voltage (V) |
12 |
Maximum Gate Source Voltage (V) |
±8 |
Maximum Gate Threshold Voltage (V) |
0.95 |
Operating Junction Temperature (°C) |
-55 to 150 |
Maximum Continuous Drain Current (A) |
4.3 |
Maximum Gate Source Leakage Current (nA) |
100 |
Maximum IDSS (uA) |
1 |
Maximum Drain Source Resistance (MOhm) |
50@4.5V |
Typical Gate Charge @ Vgs (nC) |
10@5V |
Typical Gate to Drain Charge (nC) |
2.6 |
Typical Gate to Source Charge (nC) |
1.4 |
Typical Reverse Recovery Charge (nC) |
8 |
Typical Input Capacitance @ Vds (pF) |
830@10V |
Typical Reverse Transfer Capacitance @ Vds (pF) |
125@10V |
Minimum Gate Threshold Voltage (V) |
0.4 |
Typical Output Capacitance (pF) |
180 |
Maximum Power Dissipation (mW) |
1300 |
Typical Fall Time (ns) |
210 |
Typical Rise Time (ns) |
32 |
Typical Turn-Off Delay Time (ns) |
250 |
Typical Turn-On Delay Time (ns) |
11 |
Minimum Operating Temperature (°C) |
-55 |
Maximum Operating Temperature (°C) |
150 |
Packaging |
Tape and Reel |
Maximum Pulsed Drain Current @ TC=25°C (A) |
34 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) |
100 |
Typical Gate Plateau Voltage (V) |
1.7 |
Typical Reverse Recovery Time (ns) |
22 |
Maximum Diode Forward Voltage (V) |
1.2 |
Typical Gate Threshold Voltage (V) |
0.55 |
Maximum Positive Gate Source Voltage (V) |
8 |
Pin Count |
3 |
Standard Package Name |
SOT |
Supplier Package |
SOT-23 |
Mounting |
Surface Mount |
Package Height |
1.02(Max) |
Package Length |
3.04(Max) |
Package Width |
1.4(Max) |
PCB changed |
3 |
Lead Shape |
Gull-wing |