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SECOND GENERATION Power Mosfet Transistor STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A
SECOND GENERATION Power Mosfet Transistor STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A
Specifications
Brand Name :
anterwell
Model Number :
STW21NM60N
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
Western Union, T/T, MoneyGram
Supply Ability :
5000pcs
Packaging Details :
Please contact me for details
Vdss :
600V
electric current :
17A
Power Max :
140W
PACKING :
TO-247-3
Description

STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A SECOND GENERATION MOSFET

General Features

SECOND GENERATION Power Mosfet Transistor STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A

■ 100% AVALANCHE TESTED

■ LOW INPUT CAPACITANCE AND GATE CHARGE

■ LOW GATE INPUT RESISTANCE

DESCRIPTION

The STx21NM60N is realized with the second generation. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

APPLICATIONS

It's very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

SECOND GENERATION Power Mosfet Transistor STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A

Table 2: Order Codes

SALES TYPE MARKING PACKAGE PACKAGING
STB21NM60N B21NM60N D2PAK TAPE & REEL
STB21NM60N-1 B21NM60N I 2PAK TUBE
STF21NM60N F21NM60N TO-220FP TUBE
STP21NM60N P21NM60N TO-220 TUBE
STW21NM60N W21NM60N TO-247 TUBE

Table 3: Absolute Maximum ratings

Symbol Parameter Value Unit
TO-220 / D2PAK / I 2PAK / TO-247 TO-220FP
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V
VGS Gate- source Voltage ±25 V
ID Drain Current (continuous) at TC = 25°C 17 17 (*) A
ID Drain Current (continuous) at TC = 100°C 10 10 (*) A
IDM () Drain Current (pulsed) 64 64 (*) A
PTOT Total Dissipation at TC = 25°C 140 30 W
Derating Factor 1.12 0.23 W/°C
dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns
Viso Insulation Winthstand Voltage (DC) ----- 2500 V
Tstg Storage Temperature –55 to 150 150 °C
Tj Max. Operating Junction Temperature

() Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

(1) ISD ≤ 16 A, di/dt ≤ 400 A/µs, VDD=80% V(BR)DSS

Table 4: Thermal Data

TO-220 / D²PAK / I²PAK / TO-247 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 0.89 4.21 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 °C

Table 5: Avalanche Characteristics

Symbol Parameter Max Value Unit
IAS Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 8.5 A
EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAS, VDD = 50 V) 610 mJ


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Product tags

power transistor 2n3055

,

mosfet power transistor com

,

2n3773 dc switching circuit
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SECOND GENERATION Power Mosfet Transistor STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A

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Product Detail
Brand Name :
anterwell
Model Number :
STW21NM60N
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Contact Supplier
SECOND GENERATION Power Mosfet Transistor STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A

Anterwell Technology Ltd.

Site Member
10 Years
guangdong, shenzhen
Since 2004
Business Type :
Distributor/Wholesaler, Trading Company
Main Products :
Integrated Circuit Chip, Programmable IC Chips, Circuit Board Chips
Total Annual :
500000-1000000
Employee Number :
20~30
Certification Level :
Site Member
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