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FQP50N06 Power Mosfet Transistor npn general purpose transistor
FQP50N06 Power Mosfet Transistor npn general purpose transistor
FQP50N06 Power Mosfet Transistor npn general purpose transistor
FQP50N06 Power Mosfet Transistor npn general purpose transistor
Specifications
Brand Name :
Anterwell
Model Number :
FQP50N06
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
7800pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Drain-Source Voltage :
60 V
Gate-Source Voltage :
± 20 V
Single Pulsed Avalanche Energy :
990 mJ
Avalanche Current :
52.4 A
Repetitive Avalanche Energy :
12.1 mJ
Peak Diode Recovery dv/dt :
7.0 V/ns
Description

Stock Offer (Hot Sell)

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FQP50N06L

60V LOGIC N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

Features

• 52.4A, 60V, RDS(on) = 0.021Ω @VGS = 10 V

• Low gate charge ( typical 24.5 nC)

• Low Crss ( typical 90 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter FQP50N06L Units
VDSS Drain-Source Voltage 60 V
ID

Drain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C)

 52.4 A
37.1 A
IDM Drain Current - Pulsed (Note 1) 210 A
VGSS Gate-Source Voltage ± 20 V
EAS Single Pulsed Avalanche Energy (Note 2) 990 mJ
IAR Avalanche Current (Note 1) 52.4 A
EAR Repetitive Avalanche Energy (Note 1) 12.1 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns
PD

Power Dissipation (TC = 25°C)

- Derate above 25°C

 121 W
0.81 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C

FQP50N06 Power Mosfet Transistor npn general purpose transistor

Package Dimensions

TO-220

FQP50N06 Power Mosfet Transistor npn general purpose transistor

Product tags

p55nfo power mosfet

,

2sa1535 pnp power transistor

,

2n3055 npn transistor
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FQP50N06 Power Mosfet Transistor npn general purpose transistor

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Product Detail
Brand Name :
Anterwell
Model Number :
FQP50N06
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Contact Supplier
FQP50N06 Power Mosfet Transistor npn general purpose transistor
FQP50N06 Power Mosfet Transistor npn general purpose transistor

Anterwell Technology Ltd.

Site Member
10 Years
guangdong, shenzhen
Since 2004
Business Type :
Distributor/Wholesaler, Trading Company
Main Products :
Integrated Circuit Chip, Programmable IC Chips, Circuit Board Chips
Total Annual :
500000-1000000
Employee Number :
20~30
Certification Level :
Site Member
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