TOSHIBA Transistor Silicon PNP Epitaxial Type
Power Amplifier Applications 
Driver Stage Amplifier Applications
• High transition frequency: fT = 70 MHz (typ.)
• Complementary to 2SC4793
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Absolute Maximum Ratings (Tc = 25°C)
| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | −230 | V |
| Collector-emitter voltage | VCEO | −230 | V |
| Emitter-base voltage | VEBO | −5 | V |
| Collector current | IC | −1 | A |
| Base current | IB | -0.1 | A |
| Collector power dissipation Ta = 25°C Tc = 25°C | PC | 2.0 | W |
| 20 | |||
| Junction temperature | Tj | 150 | °C |
| Storage temperature range | Tstg | −55 to 150 | °C |
