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N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor
N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor
Specifications
Brand Name :
Anterwell
Model Number :
2SK3561
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Payment Terms :
T/T, Western Union, Paypal
Supply Ability :
8200pcs
Delivery Time :
1 day
Packaging Details :
Please contact me for details
Drain-source voltage :
500 V
Drain-gate voltage (RGS = 20 kΩ) :
500 V
Gate-source voltage :
±30 V
Drain power dissipation (Tc = 25°C) :
40 W
Avalanche current :
8 A
Storage temperature range :
-55~150 °C
Description



N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3561

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.5S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

CharacteristicsSymbolRatingUnit
Drain-source voltageVDSS500V
Drain-gate voltage (RGS = 20 kΩ)VDGR500V
Gate-source voltageVGSS±30V
Drain currentDC (Note 1)ID8A
Pulse (t = 1 ms) (Note 1)IDP32A
Drain power dissipation (Tc = 25°C)PD40W
Single pulse avalanche energy (Note 2)EAS312mJ
Avalanche currentIAR 8A
Repetitive avalanche energy (Note 3)EAR 4mJ
Channel temperatureTch 150°C
Storage temperature rangeTstg-55~150°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

CharacteristicsSymbolMaxUnit
Thermal resistance, channel to caseRth (ch-c)3.125°C/W
Thermal resistance, channel to ambientRth (ch-a) 62.5°C/W

Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 8.3 mH, IAR = 8 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.

N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor
Weight : 1.7 g (typ.)


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Product tags

p-channel mosfet sot-23

,

n channel mosfet transistor

,

2a npn transistor
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N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor

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Product Detail
Brand Name :
Anterwell
Model Number :
2SK3561
Certification :
new & original
Place of Origin :
original factory
MOQ :
10pcs
Price :
Negotiate
Contact Supplier
N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor

Anterwell Technology Ltd.

Site Member
10 Years
guangdong, shenzhen
Since 2004
Business Type :
Distributor/Wholesaler, Trading Company
Main Products :
Integrated Circuit Chip, Programmable IC Chips, Circuit Board Chips
Total Annual :
500000-1000000
Employee Number :
20~30
Certification Level :
Site Member
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