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MIEB101H1200EH
MIEB101H1200EH
Specifications
Category :
Discrete Semiconductor Products Transistors IGBTs IGBT Modules
Current - Collector (Ic) (Max) :
183 A
Product Status :
Active
Mounting Type :
Chassis Mount
Package :
Box
Series :
-
Package / Case :
E3
Vce(on) (Max) @ Vge, Ic :
2.2V @ 15V, 100A
Voltage - Collector Emitter Breakdown (Max) :
1200 V
Supplier Device Package :
E3
Mfr :
IXYS
Operating Temperature :
-40°C ~ 125°C (TJ)
Current - Collector Cutoff (Max) :
300 µA
IGBT Type :
-
Power - Max :
630 W
Input :
Standard
Input Capacitance (Cies) @ Vce :
7.43 nF @ 25 V
Configuration :
Full Bridge Inverter
NTC Thermistor :
No
Base Product Number :
MIEB101
Description :
IGBT MODULE 1200V 183A 630W E3
Description
IGBT Module Full Bridge Inverter 1200 V 183 A 630 W Chassis Mount E3
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MIEB101H1200EH

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Product Detail
Category :
Discrete Semiconductor Products Transistors IGBTs IGBT Modules
Current - Collector (Ic) (Max) :
183 A
Product Status :
Active
Mounting Type :
Chassis Mount
Package :
Box
Series :
-
Contact Supplier
MIEB101H1200EH

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

Verified Supplier
3 Years
shenzhen
Since 2014
Business Type :
Agent
Main Products :
Application Specific Clock/Timing, RF Bipolar Transistors, TVS Diodes / ESD Suppressors
Total Annual :
6000000-1200000
Employee Number :
100~200
Certification Level :
Verified Supplier
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