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IMD6AT108
IMD6AT108
Specifications
Category :
Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays, Pre-Biased
Current - Collector (Ic) (Max) :
100mA
Product Status :
Active
Transistor Type :
1 PNP Pre-Biased, 1 NPN
Frequency - Transition :
250MHz
Mounting Type :
Surface Mount
Package :
Tape & Reel (TR)
Series :
-
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Supplier Device Package :
SMT6
Resistor - Base (R1) :
4.7kOhms
Mfr :
Rohm Semiconductor
Resistor - Emitter Base (R2) :
-
Current - Collector Cutoff (Max) :
500nA (ICBO)
Power - Max :
300mW
Package / Case :
SC-74, SOT-457
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1mA, 5V
Base Product Number :
IMD6
Description
Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased, 1 NPN 50V 100mA 250MHz 300mW Surface Mount SMT6
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IMD6AT108

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Product Detail
Category :
Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays, Pre-Biased
Current - Collector (Ic) (Max) :
100mA
Product Status :
Active
Transistor Type :
1 PNP Pre-Biased, 1 NPN
Frequency - Transition :
250MHz
Mounting Type :
Surface Mount
Contact Supplier
IMD6AT108

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

Verified Supplier
3 Years
shenzhen
Since 2014
Business Type :
Agent
Main Products :
Application Specific Clock/Timing, RF Bipolar Transistors, TVS Diodes / ESD Suppressors
Total Annual :
6000000-1200000
Employee Number :
100~200
Certification Level :
Verified Supplier
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