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NTE55MCP
NTE55MCP
Specifications
Category :
Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar RF Transistors
Current - Collector (Ic) (Max) :
8A
Product Status :
Active
Transistor Type :
PNP
Mounting Type :
Through Hole
Frequency - Transition :
30MHz
Package :
Bag
Series :
-
Voltage - Collector Emitter Breakdown (Max) :
150V
Supplier Device Package :
TO-220
Mfr :
NTE Electronics, Inc
Noise Figure (dB Typ @ f) :
-
Power - Max :
2W
Gain :
-
Package / Case :
TO-220-3
Operating Temperature :
-65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 2A, 2V
Description :
RF TRANS PNP 30MHZ TO220 PAIR
Description
RF Transistor PNP 150V 8A 30MHz 2W Through Hole TO-220
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NTE55MCP

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Product Detail
Category :
Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar RF Transistors
Current - Collector (Ic) (Max) :
8A
Product Status :
Active
Transistor Type :
PNP
Mounting Type :
Through Hole
Frequency - Transition :
30MHz
Contact Supplier
NTE55MCP

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

Verified Supplier
3 Years
shenzhen
Since 2014
Business Type :
Agent
Main Products :
Application Specific Clock/Timing, RF Bipolar Transistors, TVS Diodes / ESD Suppressors
Total Annual :
6000000-1200000
Employee Number :
100~200
Certification Level :
Verified Supplier
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