JY15M N Channel 40V Enhancement Mode Power MOSFET for BLDC motor driver
GENERAL DESCRIPTION
 The JY15M utilizes the latest trench processing techniques to achieve the high cell
 density and reduces the on‐resistance with high repetitive avalanche rating. These
 features combine to make this design an extremely efficient and reliable device for
 use in power switching application and a wide variety of other applications.
 FEATURES
 ● 40V/130A, RDS(ON) ≤3.1mΩ@VGS=10V
 ● Fast switching and reverse body recovery
 ● Fully characterized avalanche voltage and current
 ● Excellent package for good heat dissipation
 APPLICATIONS
 ● Switching application
 ● Hard switched and high frequency circuits
 ● Power Management for Inverter Systems
  


Dynamic Characteristics
 RG Gate Resistance
 VGS=0V,VDS=0V,
 f=1MHZ
 1.45 Ω
 Td(on) Turn‐on Delay Time
 VDS=20V, RG=6Ω,
 IDS =30A, VGS=10V,
 RL=28Ω
 18
 ns
 Tr Turn‐on Rise Time 15
 Td(off) Turn‐off Delay Time 62
 Tf Turn‐off Fall Time 35
 CISS Input Capacitance
 VGS=0V,
 VDS=20V,
 f=1.0MHz
 4500
 COSS Output Capacitance 790 pF
 CRSS
 Reverse Transfer
 Capacitance
 250
 Qg Total Gate Charge
 VDS=20V,ID=30A,
 VGS=10V
 78 85
 Qgs Gate‐Source Charge 30 nC
 Qgd Gate‐Drain Charge 24
 
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