JUYI 500V/8A N Channel Enhancement Mode Power MOSFET

| Symbol | Parameter | Limit | Unit | |
| VDS | Drain-Source Voltage | 500 | V | |
| VGS | Gate-Source Voltage | ±30 | V | |
| ID | Continuous Drain Current | Tc=25ºC | 8 | A |
| Tc=100ºC | 4.8 | |||
| IDM | Pulsed Drain Current | 30 | A | |
| PD | Maximum Power Dissipation | 80 | W | |
| TJ TSTG | Operating Junction and Storage Temperature Range | -55+150 | ºC | |
| RθJC | Thermal Resistance-Junction to Case | 1.56 | ℃/W | |

